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Infineon | BSP135IXTSA1

Manufacturer Part #

BSP135IXTSA1

Single N-Channel 600 V 45 Ohm 3.7 nC SIPMOS® Small Signal Mosfet - TO-261-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2529
Product Specification Section
Infineon BSP135IXTSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 45Ω
Rated Power Dissipation: 1.8W
Qg Gate Charge: 3.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120mA
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.1V
Input Capacitance: 98pF
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$165.00
USD
Quantity
Unit Price
1,000
$0.165
3,000
$0.162
10,000
$0.159
20,000
$0.157
40,000+
$0.153
Product Variant Information section