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Manufacturer Part #

IPD082N10N3GATMA1

Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
Infineon IPD082N10N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 8.2mΩ
Rated Power Dissipation: 125|W
Qg Gate Charge: 42nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
47,500
USA:
47,500
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,462.50
USD
Quantity
Unit Price
2,500
$0.585
5,000
$0.58
7,500
$0.575
10,000
$0.57
12,500+
$0.56
Product Variant Information section