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Infineon | IPL60R650P6SATMA1

Manufacturer Part #

IPL60R650P6SATMA1

N-Channel 600 V 650 mOhm 12 nC CoolMOS™ P6 Power Transistor - ThinPAK 5x6

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPL60R650P6SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.65Ω
Rated Power Dissipation: 56.8W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.7A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 33ns
Rise Time: 7ns
Fall Time: 14ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 557pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,475.00
USD
Quantity
Unit Price
5,000
$0.495
10,000
$0.485
15,000+
$0.48
Product Variant Information section