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Infineon | IPT60R050G7XTMA1

Manufacturer Part #

IPT60R050G7XTMA1

Single N-Channel 600 V 50 mOhm 68 nC CoolMOS™ Power Mosfet - HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2423
Product Specification Section
Infineon IPT60R050G7XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 50mΩ
Rated Power Dissipation: 245|W
Qg Gate Charge: 68nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 44A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 72ns
Rise Time: 6ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Height - Max: 2.4mm
Length: 10.1mm
Input Capacitance: 2670pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
18,000
USA:
18,000
On Order:Order inventroy details
6,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$9,180.00
USD
Quantity
Unit Price
2,000+
$4.59
Product Variant Information section