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Référence fabricant
IRF7855TRPBF
Single N-Channel 60V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2523 | ||||||||||
Infineon IRF7855TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF7855TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf7855trpbf-infineon-7173884
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF7855TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf7855trpbf-infineon-7173884
Infineon IRF7855TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 9.4mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 26nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 12A |
| Turn-on Delay Time: | 8.7ns |
| Turn-off Delay Time: | 16ns |
| Rise Time: | 13ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4.9V |
| Input Capacitance: | 1560pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRF7855TRPBF is a single N-Channel 60 V 2.5 W 26 nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.
Features:
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design
- Fully Characterized Avalanche Voltage and Current
Applications:
- Primary Side Switch in Bridge Topology in Isolated DC-DC Converters
- Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
- Secondary Side Synchronous Rectification Switch for 15Vout
- Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount