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Manufacturer Part #

IRLML2803TRPBF

Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET® Power Mosfet - MICRO-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2214
Product Specification Section
Infineon IRLML2803TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 540mW
Qg Gate Charge: 5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.2A
Turn-on Delay Time: 3.9ns
Turn-off Delay Time: 9ns
Rise Time: 4ns
Fall Time: 1.7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 1.02mm
Length: 3.04mm
Input Capacitance: 85pF
Package Style:  MICRO-3
Mounting Method: Surface Mount
$Features & Applications
The IRLML2803TRPBF is a 30 V drain-to-source voltage, 540 W power dissipation and 3.3 nC gate charge single N-Channel hexfet power mosfet. It is available in surface mount MICRO-3 package.

These HEXFETs utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:

  • Generation V technology
  • Ultra Low On-Resistance
  • N-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile(<1.1 mm)
  • Available in tape and reel
  • Fast switching
  • Lead-Free
Pricing Section
Global Stock:
591,000
Germany (Online Only):
591,000
453,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$333.00
USD
Quantity
Web Price
3,000
$0.111
9,000
$0.108
12,000
$0.107
30,000
$0.104
45,000+
$0.102
Product Variant Information section