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Manufacturer Part #

SI1024X-T1-GE3

Dual N-Channel 20 V 0.7 Ohm Surface Mount Power Mosfet - SOT-563

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2518
Product Specification Section
Vishay SI1024X-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.7Ω
Rated Power Dissipation: 250|mW
Qg Gate Charge: 0.75nC
Package Style:  SOT-563
Mounting Method: Surface Mount
Features & Applications

The SI1024X-T1-GE3 is a Dual N-Channel 20 V (D-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a SC-89 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Very Small Footprint
  • High-Side Switching
  • Low On-Resistance: 0.7 Ω
  • Low Threshold: 0.8 V (typ.)
  • Fast Switching Speed: 10 ns
  • 1.8 V Operation
  • Gate-Source ESD Protected: 2000 V
  • Compliant to RoHS Directive 2002/95/EC

Benefits:

  • Ease in Driving Switches
  • Low Offset (Error) Voltage
  • Low-Voltage Operation
  • High-Speed Circuits
  • Low Battery Voltage Operation

Applications:

  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors,etc.
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$504.00
USD
Quantity
Unit Price
3,000
$0.168
6,000
$0.166
12,000
$0.164
45,000+
$0.16
Product Variant Information section