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Manufacturer Part #

BSP171PH6327XTSA1

Single P-Channel 60 V 0.3 Ohm 20 nC SIPMOS® Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2515
Product Specification Section
Infineon BSP171PH6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.3Ω
Rated Power Dissipation: 1.8W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 19A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 208ns
Rise Time: 33ns
Fall Time: 130ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 1.7mm
Length: 6.7mm
Input Capacitance: 365pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
2,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$285.00
USD
Quantity
Unit Price
1,000
$0.285
3,000
$0.28
15,000
$0.275
25,000+
$0.27
Product Variant Information section