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Référence fabricant

FDC658P

P-Channel 30 V 50 mOhm Surface Mount Logic Level PowerTrench Mosfet SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2446
Product Specification Section
onsemi FDC658P - Caractéristiques techniques
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.05Ω
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 8nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC658P is a 30 V 0.05 Ω Single P-Channel Logic Level PowerTrench Mosfet available in a SSOT-6 package .

This P-Channel Logic Level MOSFET is  advanced PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management,
battery charging circuits, and DC/DC conversion.

Features:

  • -4 A, -30 V. RDS(ON) = 0.050 W @ VGS = -10 V
  • RDS(ON) = 0.075 W @ VGS = -4.5 V.
  • Low gate charge (8nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
945,00 $
USD
Quantité
Prix unitaire
3 000
$0.315
6 000
$0.31
12 000
$0.305
15 000+
$0.30
Product Variant Information section