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onsemi | FDS4685

Manufacturer Part #

FDS4685

P-Channel 40 V 27 mΩ 1.2 W PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2439
Product Specification Section
onsemi FDS4685 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 27mΩ
Rated Power Dissipation: 1.2|W
Qg Gate Charge: 19nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4685 is a 40 V 27 mΩ P-Channel MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V – 20 V).

Features:

  • –8.2 A, –40 V
  • RDS(ON)= 0.027 Ω@ VGS= –10 V
  • RDS(ON)= 0.035  Ω@ VGS= –4.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Global Stock:
195,000
USA:
195,000
On Order:Order inventroy details
387,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$800.00
USD
Quantity
Unit Price
2,500
$0.32
5,000
$0.315
12,500+
$0.31
Product Variant Information section