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onsemi | FDT3612

Référence fabricant

FDT3612

N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi FDT3612 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 120mΩ
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 14nC
Style d'emballage :  SOT-223 (TO-261-4, SC-73)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDT3612 is a 100 V 120 mΩ N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features:

  • 3.7 A, 100 V
  • RDS(on) = 120 mΩ@ VGS = 10 V
  • RDS(on) = 130 mΩ @ VGS = 6 V
  • Fast switching speed
  • Low gate charge (14nC typical)
  • High performance trench technology 
  • High power and current handling capability 

Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
44 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
23 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 460,00 $
USD
Quantité
Prix unitaire
4 000
$0.365
8 000
$0.36
16 000
$0.355
20 000+
$0.35
Product Variant Information section