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Référence fabricant
NDS352AP
P-Channel 30 V 0.5 Ω Surface Mount Field Effect Transistor - SSOT-3
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SSOT-3 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2426 | ||||||||||
onsemi NDS352AP - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=NDS352AP&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/nds352ap-onsemi-1190588
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=NDS352AP&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/nds352ap-onsemi-1190588
onsemi NDS352AP - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 300mΩ |
| Rated Power Dissipation: | 0.46|W |
| Qg Gate Charge: | 3nC |
| Style d'emballage : | SSOT-3 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The NDS352AP is a Part of NDS Series P-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features:
- -0.9 A, -30 V
- RDS(ON) = 0.5 O @ VGS = -4.5 V
- RDS(ON) = 0.3 O @ VGS = -10 V
- Industry standard outline SOT-23 surface mount package using proprietary Super SOT-3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(on)
- Exceptional on-resistance and maximum DC current capability
View the Series of P-Channel MOSFETs
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SSOT-3
Méthode de montage :
Surface Mount