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Référence fabricant
SIR178DP-T1-RE3
40 V, 430 A, 0.04 mOhm, PowerPak SO-8
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-SO-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2417 | ||||||||||
Vishay SIR178DP-T1-RE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Cancellation of Future PCN 98543Dear Valued Customer,Please be informed that PCN-SIL-018-2023-REV-1 has been withdrawn.REASON:10-6-23 Per Andrew Tsai: to correct the PCN subjectDescription of Change: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK? SO-8 and SO-8 package to replace the original material, Pb88Sn10Ag2, for the yield improvement
Cancellation of Future PCN 98474Dear Valued Customer,Please be informed that PCN-SIL-018-2023-REV-0 has been withdrawn.REASON:10-6-23 Per Andrew Tsai: to correct the PCN subjectDescription of Change: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK? SO-8 and SO-8 package to replace the original material, Pb88Sn10Ag2, for the yield improvement.
Vishay Siliconix Announces New Material of Solder Paste for Commercial Power MOSFETs in PowerPAK? SO-8 and SO-8 Package (update the subject of PCN-SIL-018-2023-REV-0)Description of Change: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK? SO-8 and SO-8 package to replace the original material, Pb88Sn10Ag2, for the yield improvement.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIR178DP-T1-RE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sir178dp-t1-re3-vishay-3175390
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIR178DP-T1-RE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sir178dp-t1-re3-vishay-3175390
Vishay SIR178DP-T1-RE3 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.4mΩ |
| Rated Power Dissipation: | 6.3W |
| Qg Gate Charge: | 207nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 83ns |
| Rise Time: | 10ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.5V |
| Input Capacitance: | 12430pF |
| Series: | TrenchFET |
| Style d'emballage : | POWERPAK-SO-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SO-8
Méthode de montage :
Surface Mount