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STMicroelectronics | STP28N65M2

Manufacturer Part #

STP28N65M2

Single N-Channel 650 V 170 W 35 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STP28N65M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 170W
Qg Gate Charge: 35nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 20A
Turn-on Delay Time: 13.4ns
Turn-off Delay Time: 59ns
Rise Time: 10ns
Fall Time: 8.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 10.4mm
Length: 9.52mm
Input Capacitance: 1440pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$3,400.00
USD
Quantity
Unit Price
50
$3.52
150
$3.48
500
$3.43
1,000
$3.40
2,000+
$3.35
Product Variant Information section