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STMicroelectronics | STP30N65M5

Manufacturer Part #

STP30N65M5

N-Channel 650 V 0.139 Ohm MDmesh V Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2519
Product Specification Section
STMicroelectronics STP30N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.139Ω
Rated Power Dissipation: 140W
Qg Gate Charge: 64nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 22A
Turn-off Delay Time: 50ns
Rise Time: 8ns
Fall Time: 10ns
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 2880pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
150
USA:
150
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
36 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$405.00
USD
Quantity
Unit Price
50
$8.10
150
$8.04
200
$8.02
500
$7.97
750+
$7.92
Product Variant Information section