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Diodes Incorporated | DMG3401LSN-7

Manufacturer Part #

DMG3401LSN-7

Single P-Channel 30 V 85 mOhm 11.6 nC 1.2 W Silicon SMT Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG3401LSN-7 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 85mΩ
Rated Power Dissipation: 1.2W
Qg Gate Charge: 11.6nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: -3A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 71ns
Rise Time: 13ns
Fall Time: 38ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1.3V
Technology: Si
Height - Max: 1.3mm
Length: 3.1mm
Input Capacitance: 1326pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$660.00
USD
Quantity
Unit Price
3,000
$0.22
6,000
$0.215
15,000+
$0.21
Product Variant Information section