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onsemi | FCB11N60TM

Manufacturer Part #

FCB11N60TM

FCB11N60 Series 600 V 11 A 380 mOhm N-Channel SuperFET Mosfet - D²PAK-3

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Mfr. Name: onsemi
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Product Specification Section
onsemi FCB11N60TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 380mΩ
Rated Power Dissipation: 125|W
Qg Gate Charge: 40nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FCB11N60TM is a 600 V 0.38 Ω Surface Mount N-Channel Mosfet D2PAK-3 package .

SuperFET® a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Product Features:

  • 650V @TJ=150°C
  • Typ. Rds(on)=0.15Ω
  • Fast Recovery Type ( trr = 160ns )
  • Ultra low gate charge (typ. Qg=75nC)
  • Low effective output capacitance (typ. Coss.eff=165pF)
  • 100% avalanche tested
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
539
Factory Lead Time:
28 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$2,304.00
USD
Quantity
Unit Price
800+
$2.88
Product Variant Information section