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Manufacturer Part #
FCB11N60TM
FCB11N60 Series 600 V 11 A 380 mOhm N-Channel SuperFET Mosfet - D²PAK-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
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onsemi FCB11N60TM - Product Specification
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FCB11N60TM&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fcb11n60tm-onsemi-9969452
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FCB11N60TM&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fcb11n60tm-onsemi-9969452
onsemi FCB11N60TM - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 380mΩ |
| Rated Power Dissipation: | 125|W |
| Qg Gate Charge: | 40nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The FCB11N60TM is a 600 V 0.38 Ω Surface Mount N-Channel Mosfet D2PAK-3 package .
SuperFET® a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Product Features:
- 650V @TJ=150°C
- Typ. Rds(on)=0.15Ω
- Fast Recovery Type ( trr = 160ns )
- Ultra low gate charge (typ. Qg=75nC)
- Low effective output capacitance (typ. Coss.eff=165pF)
- 100% avalanche tested
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount