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onsemi | FDS2670

Manufacturer Part #

FDS2670

Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS2670 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 275mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 43nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 48ns
Rise Time: 16ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: PowerTrench
Input Capacitance: 1228pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,212.50
USD
Quantity
Unit Price
2,500
$0.885
5,000
$0.87
7,500+
$0.86
Product Variant Information section