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Vishay | SI8497DB-T2-E1

Manufacturer Part #

SI8497DB-T2-E1

30V 13A 53mOhm P-Channel 6-UFBGA

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2539
Product Specification Section
Vishay SI8497DB-T2-E1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 53mΩ
Rated Power Dissipation: 2.77W
Qg Gate Charge: 32.6nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 5.9A
Turn-on Delay Time: 50ns
Turn-off Delay Time: 75ns
Rise Time: 10ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.1V
Input Capacitance: 1320pF
Series: TrenchFET
Package Style:  MICRO-FOOT
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$675.00
USD
Quantity
Unit Price
3,000
$0.225
9,000
$0.22
30,000+
$0.215
Product Variant Information section