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Vishay | SQJ960EP-T1_GE3

Manufacturer Part #

SQJ960EP-T1_GE3

Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
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Product Specification Section
Vishay SQJ960EP-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.04Ω
Rated Power Dissipation: 34|W
Qg Gate Charge: 20nC
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Features & Applications

The SQJ960EP-T1-GE3 is a Part of the SQ Automotive Series N-Channel 60 V (D-S) 175 °C MOSFETs.

The Vishay Siliconix SQ series of AEC Q101 qualified power MOSFETs are produced using a special process design that is optimized for automotive excellence. Featuring low on-resistance n- and p-channel TrenchFET® technologies, these automotive power MOSFETs are rated for a maximum junction temperature of 175 °C. 

Features:

  • Superior performance based on leading TrenchFET® Power MOSFET technology
  • AEC Q101 Qualified
  • Rated at 175°C
  • Best in class RDS(on) performance
  • Rugged  transistor technology, 100 % Rg Tested
  • Halogen-free per IEC 61249-2-21 Definition
  • Typical ESD Protection: 800 V
  • Compliant to RoHS Directive 2002/95/EC
  • PPAK SO-8 package to reduce DPAK size by ~50% with increased current density to 60A
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$10,530.00
USD
Quantity
Unit Price
3,000+
$3.51
Product Variant Information section