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STMicroelectronics | STW12N120K5

Manufacturer Part #

STW12N120K5

N-Channel 1200 V 12 A 690 mOhm Through Hole MDmesh™ K5 Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STW12N120K5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 0.69Ω
Rated Power Dissipation: 250W
Qg Gate Charge: 44.2nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 12A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 68.5ns
Rise Time: 11ns
Fall Time: 18.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 20.15mm
Length: 15.75mm
Input Capacitance: 1370pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
300
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$6,654.00
USD
Quantity
Unit Price
30
$11.37
90
$11.28
150
$11.24
300
$11.18
600+
$11.09
Product Variant Information section