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Manufacturer Part #

IPD60R600PFD7SAUMA1

IPD60R600PFD7S Series 600 V 6 A 0.6 Ohm Single N-Channel MOSFET - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R600PFD7SAUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 31W
Qg Gate Charge: 8.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 43.5ns
Rise Time: 10ns
Fall Time: 23ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 344pF
Series: CoolMOS PFD7
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$850.00
USD
Quantity
Unit Price
2,500
$0.34
5,000
$0.335
12,500+
$0.325
Product Variant Information section