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Référence fabricant
APT25GT120BRG
APT25Gxx Series 1200 V 54 A 347 W Through Hole Thunderbolt IGBT - TO-247 -3
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Microchip APT25GT120BRG - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
PCN Status:Final NotificationDescription of Change:Qualification of MG15F-35AB and MG15F-0140B as a new mold compound material for various products available in TO-264, SOT-227 and TO-247 packages at FSTS assembly site.Reason for Change:To improve productivity by qualifying MG15F-35AB and MG15F-0140B as a new mold compound.Change Implementation Status:In ProgressEstimated First Ship Date:June 29, 2024 (date code: 2426)
PCN Status:Initial NotificationDescription of Change:Qualification of MG15F-35AB and MG15F-0140B as a new mold compound material for various products available in TO-264, SOT-227 and TO-247 packages at FSTS assembly site.Reason for Change:To improve productivity by qualifying MG15F-35AB and MG15F-0140B as a new mold compound material at FSTS assembly site.
Description of Change:Qualification of INMK as a new fabrication site for selected APTGFxx, CMANGFxx, CMHSLGxx, MSCGLQxx, APT25Gxx, APT50Gxx, APT100xx, APT150xx, APT40Gxx, APT60Gxx, APT75Gxx and APT33Gxx device families available in 1200V Fast Switching Emitter Controlled Bare Die products.Reason for Change:To improve on-time delivery performance by qualifying INMK as a new fabrication site.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT25GT120BRG&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--igbts/apt25gt120brg-microchip-6054656
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT25GT120BRG&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--igbts/apt25gt120brg-microchip-6054656
Microchip APT25GT120BRG - Caractéristiques techniques
| CE Voltage-Max: | 1200V |
| Collector Current @ 25C: | 54A |
| Power Dissipation-Tot: | 347W |
| Gate - Emitter Voltage: | ±30V |
| Pulsed Collector Current: | 75A |
| Collector - Emitter Saturation Voltage: | 3.2V |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 150ns |
| Qg Gate Charge: | 170nC |
| Leakage Current: | 120nA |
| Input Capacitance: | 1650pF |
| Thermal Resistance: | 0.36°C/W |
| Operating Temp Range: | -55°C to +150°C |
| No of Terminals: | 3 |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole