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Infineon | BSC026N08NS5ATMA1

Manufacturer Part #

BSC026N08NS5ATMA1

BSC026N08NS5 Series 80 V 23 A OptiMOSTM5 Power-Transistor - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC026N08NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 74nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 47ns
Rise Time: 14ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 5200pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$5,300.00
USD
Quantity
Unit Price
5,000+
$1.06
Product Variant Information section