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onsemi | FQPF9N90CT

Manufacturer Part #

FQPF9N90CT

N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220F

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2502
Product Specification Section
onsemi FQPF9N90CT - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 68|W
Qg Gate Charge: 58nC
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Flange Mount
Features & Applications

The FQPF9N90CT N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies.

Key Features:

  • 8.0 A, 900V, RDS(on) =   1.4 ? @VGS = 10 V
  • Low gate charge (typical 45nC)
  • Low Crss (typical 14pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,210.00
USD
Quantity
Unit Price
1,000
$2.21
2,000
$2.20
3,000
$2.19
4,000+
$2.17
Product Variant Information section