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Manufacturer Part #

STD12N50M2

STD12N50M2 Series 500 V 0.38 Ohm 10 A N-Channel MDmesh™ M2 Power Mosfet - DPAK-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD12N50M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.38Ω
Rated Power Dissipation: 85W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 10A
Turn-on Delay Time: 13.5ns
Turn-off Delay Time: 8ns
Rise Time: 10.5ns
Fall Time: 34.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 550pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,650.00
USD
Quantity
Unit Price
2,500
$0.66
5,000
$0.65
7,500
$0.645
12,500+
$0.635
Product Variant Information section