ON Semiconductor 900V Silicon Carbide (SiC) MOSFETs
900V SiC MOSFETs provide high efficiency and support fast switching speeds
ON Semiconductor has introduced a family of 900V-rated Silicon Carbide (SiC) MOSFETs which provide wide-ranging improvements in performance over that of equivalent silicon devices, offering lower losses, support for higher operating temperatures, faster switching, lower EMI and higher reliability.
The new 900V MOSFETs are intended for use in demanding applications including Uninterruptible Power Supplies (UPS) and server power supplies.
ON Semiconductor’s 900V N-channel SiC MOSFETs include a fast intrinsic diode with low reverse-recovery charge to provide a marked reduction in power losses. The MOSFETs also support faster switching to enable the system designer to increase power density through the use of fewer and smaller passive components.
The MOSFETs’ small package sizes also contribute to their high performance in high-frequency power-conversion applications: they are characterized by lower device capacitance and low gate charge, thus reducing switching losses when operating at high frequency. As well as improving efficiency, this reduces EMI below the levels produced by comparable silicon-based MOSFETs.
ON Semiconductor’s 900V MOSFETs feature a low forward voltage, producing threshold-free on-state characteristics. These reduce the static losses which occur when the device is conducting.
The range of 900V SiC MOSFETs includes products intended for automotive applications which are AEC-Q100 qualified and PPAP capable.
Parts Available for Immediate Sampling
|Part Number||Maximum Gate-Source Threshold Voltage||Maximum Gate-Source Threshold Voltage||Package Type||Sample Request|
|NTBG020N090SC1||4.3V||112A||D2PAK7 (TO-263-7L HV)|
900V SiC MOSFET Features
900V SiC MOSFET Applications
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Overview of WBG and SiC Capabilities