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Manufacturer Part #
IPD70N10S3L12ATMA1
Single N-Channel 100 V 11.5 mOhm 77 nC CoolMOS™ Power Mosfet - TO-252-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2414 | ||||||||||
Infineon IPD70N10S3L12ATMA1 - Product Specification
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Subject: Several changes affecting products IPBxxS3-xx, IPPxxS3-xx, IPDxxS3-xx, IPBxxS3L-xx, IPPxxS3L-xx and IPDxxS3L-xxReason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in wafer fab Regensburg, we have extended our FE capacity for products IPBxxS3-xx, IPPxxS3-xx, IPDxxS3-xx and IPBxxS3L-xx, IPPxxS3L-xx, IPDxxS3L-xx Ensure delivery capability by establishing same SFET3 technology at well known Infineon FE fab Kulim.Expansion of wafer test to increase testing capacity.
Part Status:
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPD70N10S3L12ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/ipd70n10s3l12atma1-infineon-3135436
Infineon IPD70N10S3L12ATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 11.5mΩ |
| Rated Power Dissipation: | 125W |
| Qg Gate Charge: | 77nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 70A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 6ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +175°C |
| Input Capacitance: | 5550pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount