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Manufacturer Part #

IPD70N10S3L12ATMA1

Single N-Channel 100 V 11.5 mOhm 77 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2414
Product Specification Section
Infineon IPD70N10S3L12ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 11.5mΩ
Rated Power Dissipation: 125W
Qg Gate Charge: 77nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 70A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 35ns
Rise Time: 6ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Input Capacitance: 5550pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,900.00
USD
Quantity
Unit Price
2,500
$1.16
5,000+
$1.14
Product Variant Information section