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Vishay | SI8457DB-T1-E1

Manufacturer Part #

SI8457DB-T1-E1

P-Channel 12 V 19 mOhm 1.1 W TrenchFET Gen III Mosfet-MICRO FOOT 1.6x1.6

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI8457DB-T1-E1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 19mΩ
Rated Power Dissipation: 1.1W
Qg Gate Charge: 62nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 6.5A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 400ns
Rise Time: 13ns
Fall Time: 215ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Input Capacitance: 2900pF
Package Style:  MICRO-FOOT
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
6000
Multiple Of:
3000
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Total
$1,560.00
USD
Quantity
Unit Price
3,000
$0.26
9,000
$0.255
15,000+
$0.25
Product Variant Information section