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Manufacturer Part #

STP31N65M5

N-Channel 650 V 22 A 148 mOhm Through Hole MDmesh™ V Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP31N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.148Ω
Rated Power Dissipation: 150|W
Qg Gate Charge: 45nC
Package Style:  TO-220-3 (TO-220AB)
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,800.00
USD
Quantity
Unit Price
50
$1.86
200
$1.83
750
$1.80
1,250
$1.79
2,500+
$1.76
Product Variant Information section