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Manufacturer Part #

TQM025NB04CR RLG

N-Channel 40 V 157 A 136 W Surface Mount Power MOSFET - PDFN56-8

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2420
Product Specification Section
Taiwan Semiconductor TQM025NB04CR RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.5mΩ
Rated Power Dissipation: 3.1W
Qg Gate Charge: 118nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 76ns
Rise Time: 34ns
Fall Time: 39ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: TrenchMOS
Input Capacitance: 6676pF
Package Style:  PDFN56U
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,700.00
USD
Quantity
Unit Price
2,500
$1.08
7,500+
$1.07
Product Variant Information section