Infineon EiceDRIVER™ Transformer Driver ICs
Supports TRENCHSTOP™ IGBTs, OptiMOS™ MOSFETs, CoolMOS™ superjunction MOSFETs, CoolGaN™ high electron mobility transistors, and CoolSiC™ MOSFETs
Infineon features the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. The IC features a unique duty-cycle adjustment capability, integrated temperature, short-circuit, and UVLO protections, and frequency adjustment options, all of which contribute to highly efficient, customizable, and flexible design possibilities aimed at reducing system costs and enhancing reliability.
Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions utilizing efficent power supplies. That’s why we offer new EiceDRIVER™ Power 2EP1xxR transformer driver IC solutions suitable for any isolated gate driver power switch, and any application. Designed to optimally supply gate drivers for various switches, it supports TRENCHSTOP™ IGBTs, OptiMOS™ MOSFETs, CoolMOS™ superjunction MOSFETs, CoolGaN™ high electron mobility transistors, and CoolSiC™ MOSFETs, working seamlessly with EiceDRIVER™ gate driver ICs and other similar products.
Features
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Block Diagram 2EP1xxR Family
Featured Lineup
Evaluation Board for 2EP1xxR
5 W, 20 V full bridge transformer ICs for isolated gate driver supply - with dual output peak rectification for SiC
| EVAL-2EP130R-PR-SIC This evaluation board includes dual output peak rectification and customizable output voltage for SiC MOSFETs. All 2EP1xx product variants are pin-compatible and can be used with matching configuration settings in customer-specific designs. 2EP130R is pre-assembled on EVAL-2EP130R-PR-SIC for complete feature evaluation. The evaluation board provides all the necessary supply, load, and signal connections for an application. | |

