IRLL024NTRPBF in Reel by Infineon | Mosfets | Future Electronics
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Infineon | IRLL024NTRPBF

Manufacturer Part #

IRLL024NTRPBF

Single N-Channel 55 V 0.1 Ohm 15.6 nC HEXFET® Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2452
Product Specification Section
Infineon IRLL024NTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.1Ω
Rated Power Dissipation: 2.1W
Qg Gate Charge: 15.6nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 4.4A
Turn-on Delay Time: 7.4ns
Turn-off Delay Time: 18ns
Rise Time: 21ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 1.8mm
Length: 6.7mm
Input Capacitance: 510pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
45,000
USA:
45,000
On Order:Order inventroy details
210,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$427.50
USD
Quantity
Unit Price
2,500
$0.171
5,000
$0.169
7,500
$0.168
10,000
$0.167
12,500+
$0.164
Product Variant Information section