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Infineon Technologies | IKWH75N65EH7XKSA1

Manufacturer Part #

IKWH75N65EH7XKSA1

IGBT,650V, 80A, TO-247-3-HCC

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IKWH75N65EH7XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 341W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 1.4V
Turn-on Delay Time: 25ns
Turn-off Delay Time: 195ns
Qg Gate Charge: 150nC
Reverse Recovery Time-Max: 89ns
Leakage Current: 100nA
Input Capacitance: 3884pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
240
Multiple Of:
30
Total
$1,056.00
USD
Quantity
Unit Price
30
$4.47
120
$4.40
300
$4.35
750
$4.30
1,200+
$4.23
Product Variant Information section