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Vishay | VSMY2850G

Manufacturer Part #

VSMY2850G

850 nm 100 mA ±10° Surface Mount High Speed Infrared Emitting Diode

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2610
Product Specification Section
Vishay VSMY2850G - Technical Attributes
Attributes Table
Wavelength: 850nm
Angle of Half Intensity: ±10°
Intensity: 100mW/cm2
Forward (Drive) Current: 100mA
Forward Voltage: 1.65V
Mounting Method: Surface Mount
Features & Applications

The VSMY2850G is a 850 nm peak wavelength, high speed infrared emitting diode.

This diode has designed based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting.

Features:

  • Dimensions 2.3 x 2.3 x 2.8 mm
  • 850 nm peak wavelength
  • High reliability
  • High radiant power and very high radiant intensity
  • Angle of half sensitivity Φ = ±10°
  • Suitable for high pulse current operation

Applications:

  • IrDA compatible data transmission
  • Miniature light barrier
  • Photointerrupters and optical switch
  • Emitter source for proximity sensors
  • IR touch panels and IR illumination

 

Pricing Section
Global Stock:
12,000
USA:
12,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
6000
Multiple Of:
6000
Total
$1,740.00
USD
Quantity
Unit Price
6,000+
$0.29
Product Variant Information section