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Diodes Incorporated | DMN30H4D0L-7

Manufacturer Part #

DMN30H4D0L-7

MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN30H4D0L-7 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 300V
Drain-Source On Resistance-Max: 4Ω
Rated Power Dissipation: 0.47W
Qg Gate Charge: 7.6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.25A
Turn-on Delay Time: 4.9ns
Turn-off Delay Time: 25.8ns
Rise Time: 4.7ns
Fall Time: 17.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 187.3pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$1,800.00
USD
Quantity
Unit Price
3,000
$0.60
6,000
$0.595
9,000
$0.59
12,000+
$0.58
Product Variant Information section