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Infineon Technologies | BSZ086P03NS3GATMA1

Manufacturer Part #

BSZ086P03NS3GATMA1

Single P-Channel 30 V 8.6 mOhm 43.2 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSZ086P03NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 8.6mΩ
Rated Power Dissipation: 2.1|W
Qg Gate Charge: 43.2nC
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
40,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$4,175.00
USD
Quantity
Unit Price
5,000+
$0.835
Product Variant Information section