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Manufacturer Part #
IRFL4310TRPBF
Single N-Channel 100V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOT-223 (TO-261-4, SC-73) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2524 | ||||||||||
Infineon IRFL4310TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFL4310TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/2173869
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFL4310TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/2173869
Infineon IRFL4310TRPBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.2Ω |
| Rated Power Dissipation: | 2.1|W |
| Qg Gate Charge: | 17nC |
| Package Style: | SOT-223 (TO-261-4, SC-73) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount