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Infineon Technologies | ISC019N04NM5ATMA1

Manufacturer Part #

ISC019N04NM5ATMA1

OptiMOS 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies ISC019N04NM5ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.9mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 42nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 29A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 15ns
Rise Time: 4ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.4V
Technology: OptiMOS
Input Capacitance: 3000pF
Series: OptiMOS 5
Package Style:  TDSON-8 FL
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$6,200.00
USD
Quantity
Unit Price
5,000+
$1.24
Product Variant Information section