text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Bipolar (BJT) Transistors
  6. BDX53CG

onsemi | BDX53CG

Manufacturer Part #

BDX53CG

BDX Series 100 V 8 A Darlington Complementary Silicon Power Transistor TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2441
Product Specification Section
onsemi BDX53CG - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 100V
Collector Current Max: 8A
DC Current Gain-Min: 750
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

Features:

  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdc
    • VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
    • VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
    • VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
Pricing Section
Global Stock:
400
USA:
400
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
100
Multiple Of:
50
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$40.00
USD
Quantity
Unit Price
100
$0.40
250
$0.39
1,000
$0.38
3,750+
$0.365
Product Variant Information section