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onsemi | BDX53CG

Manufacturer Part #

BDX53CG

BDX Series 100 V 8 A Darlington Complementary Silicon Power Transistor TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2441
Product Specification Section
onsemi BDX53CG - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 100V
Collector Current Max: 8A
DC Current Gain-Min: 750
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

Features:

  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdc
    • VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
    • VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
    • VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
Pricing Section
Global Stock:
200
USA:
200
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
100
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$40.00
USD
Quantity
Unit Price
100
$0.40
250
$0.39
1,000
$0.38
3,750+
$0.365
Product Variant Information section