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Infineon | IPD350N06LGBTMA1

Manufacturer Part #

IPD350N06LGBTMA1

Single N-Channel 60 V 35 mOhm 10 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2521
Product Specification Section
Infineon IPD350N06LGBTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 68|W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 29A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 29ns
Rise Time: 21s
Fall Time: 20s
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 600pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
27,500
USA:
27,500
On Order:Order inventroy details
32,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$687.50
USD
Quantity
Unit Price
2,500
$0.275
5,000
$0.27
12,500
$0.265
25,000+
$0.26
Product Variant Information section