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Infineon | IPL60R365P7AUMA1

Manufacturer Part #

IPL60R365P7AUMA1

Single N-Channel 600 V 365 mOhm 25 nC CoolMOS™ Power Mosfet - VSON-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPL60R365P7AUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.365Ω
Rated Power Dissipation: 46W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 4ns
Fall Time: 10ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 555pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$5,100.00
USD
Quantity
Unit Price
3,000+
$1.70
Product Variant Information section