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Infineon | IRF9952TRPBF

Manufacturer Part #

IRF9952TRPBF

Dual N/P-Channel 30 V 0.1/0.15 Ohm 6.9/6.1 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF9952TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 100mΩ/250mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 6.9nC/6.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.5A/2.3A
Turn-on Delay Time: 6.2ns/9.7ns
Turn-off Delay Time: 13ns/20ns
Rise Time: 8.8ns/14ns
Fall Time: 3ns/6.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Generation V
Input Capacitance: 190pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,000.00
USD
Quantity
Unit Price
4,000
$0.25
12,000
$0.245
20,000+
$0.24
Product Variant Information section