text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSC093N04LSGATMA1

Infineon | BSC093N04LSGATMA1

Manufacturer Part #

BSC093N04LSGATMA1

Single N-Channel 40 V 9.3 mOhm 18 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2432
Product Specification Section
Infineon BSC093N04LSGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 9.3mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 18nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 49A
Turn-on Delay Time: 3.6ns
Turn-off Delay Time: 16ns
Rise Time: 2.4ns
Fall Time: 2.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 1400pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
75,000
USA:
75,000
On Order:Order inventroy details
80,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$790.00
USD
Quantity
Unit Price
5,000
$0.158
10,000
$0.156
15,000
$0.155
20,000
$0.154
25,000+
$0.152
Product Variant Information section