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Infineon Technologies | IRF3415PBF

Manufacturer Part #

IRF3415PBF

Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2535
Product Specification Section
Infineon Technologies IRF3415PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 42mΩ
Rated Power Dissipation: 200|W
Qg Gate Charge: 200nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRF3415PBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

Pricing Section
Global Stock:
30,780
USA:
30,780
On Order:Order inventroy details
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$47.00
USD
Quantity
Unit Price
50
$0.94
200
$0.915
1,000
$0.885
2,000
$0.875
6,250+
$0.845
Product Variant Information section