onsemi | MC74VHC14DR2G

It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Features:

• High Speed: tPD = 5.5 ns (Typ) at VCC = 5.0 V
• Low Power Dissipation: ICC = 2.0 µA (Max) at TA = 25°C
• High Noise Immunity: VNIH = VNIL = 28% VCC
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Designed for 2.0 V to 5.5 V Operating Range
• Low Noise: VOLP = 0.8 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V
• Chip Complexity: 60 FETs or 15 Equivalent Gates
• These Devices are Pb−Free and are RoHS Compliant