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Manufacturer Part #
SIR-563ST3F
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1000 per Bag
Through Hole
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Detailed description of change: NOW: 1. RSCFactory2.Lead terminal Solder plating AFTER:1. Subcontracting (Thailand plant)2. Lead terminal Sn plating Reason:Entrust manufacturing by overseas OSAT manufacturers (Lite-On) to ensure stable supply in order to cope with aging equipment
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The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment.
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Inventory held at our manufacturer's warehouse. Subject to availability and transit time.